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2SC2460 |
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| Part Number | 2SC2460 |
| Manufacturer | INCHANGE |
| Description | ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Complement to Type 2SA1050 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP... |
| Features |
tter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= 140V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
2SC2460
MIN TYP. MAX UNIT
140
V
140
V
5
V
2.0
V
10 μA
10 μA
55
240
90
MHz
hFE Classifications R O Y 55-110 80-160 120-240 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is pr... |
| Document |
 2SC2460 Data Sheet
PDF 190.47KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2460 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC2461 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC2461A |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC2462 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC2462 |
Renesas |
Silicon NPN Epitaxial Transistor |
|
| 6 | 2SC2462 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
Desde 2024. D4U Semiconductor.
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