2SC2168 |
Part Number | 2SC2168 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·DC Current Gain- : hFE= 60(Min)@ (VCE= 10V, IC= 0.7A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
Features |
C= 25mA; IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.7A; IB= 0.07A
1.0
V
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
10 μA
hFE
DC Current Gain
IC= 0.7A; VCE= 10V
60
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
35
pF
fT
Current-Gain—Bandwidth Product
IE= -0.2A ; VCE= 12V
15
MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
IC= 1A; IB1= -IB2= 0.1A; VCC= 20V; RL= 20Ω
1.0
μs
3.0
μs
tf
Fall Time
1.5
μs
NOTICE: ISC reserves the rights to make changes of the content herein the dat... |
Document |
2SC2168 Data Sheet
PDF 226.72KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC2166 |
INCHANGE |
NPN Transistor | |
2 | 2SC2167 |
INCHANGE |
NPN Transistor | |
3 | 2SC2167 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SC2168 |
SavantIC |
Silicon NPN Power Transistor | |
5 | 2SC2101 |
Toshiba |
Silicon NPN POWER TRANSISTOR | |
6 | 2SC2101 |
HGSemi |
Silicon NPN POWER TRANSISTOR |