2SD1403 |
Part Number | 2SD1403 |
Manufacturer | INCHANGE |
Description | ·High Breakdown Voltage ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of c... |
Features |
Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 5V
2SD1403
MIN TYP MAX UNIT
1500
V
800
V
7
V
5.0
V
1.5
V
10 μA
1
mA
8
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC prod... |
Document |
2SD1403 Data Sheet
PDF 213.00KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SD1400 |
INCHANGE |
NPN Transistor | |
2 | 2SD1401 |
Sanyo Semicon Device |
NPN TRIPLE DIFFUSED PLANAR TYPE SILICON TRANSISTOR | |
3 | 2SD1402 |
INCHANGE |
NPN Transistor | |
4 | 2SD1402 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SD1403 |
Sanyo |
NPN Triple Diffused Planar Silicon Transistor | |
6 | 2SD1403 |
SavantIC |
SILICON POWER TRANSISTOR |