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2SB1105 |
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| Part Number | 2SB1105 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Complement to Type 2SD1605 ·Minimum Lot-to-Lot variations for robust device... |
| Features |
Voltage IC= -25mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -1.5A; IB= -3mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -3A; IB= -30mA
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
ICEO
Collector Cutoff Current
VCE= -100V; RBE= ∞
hFE
DC Current Gain
IC= -1.5A; VCE= -3V
2SB1105
MIN TYP. MAX UNIT
-120
V
-7
V
-1.5
V
-3.0
V
-2.0
V
-3.5
V
-100 μA
-10 μA
1000... |
| Document |
 2SB1105 Data Sheet
PDF 209.08KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1100 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 2 | 2SB1101 |
Hitachi Semiconductor |
PNP Transistor |
|
| 3 | 2SB1101 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1101 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB1102 |
Hitachi Semiconductor |
PNP Transistor |
|
| 6 | 2SB1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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