Busque con el número de pieza junto con el fabricante o la descripción
2SB1101 |
Click to view a larger image
| Part Number | 2SB1101 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1601 ·Minimum Lot-to-Lot variations for robust device pe... |
| Features |
age IC= -30mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -2A; IB= -4mA
VBE(sat)-2 Base-Emitter Saturation Voltage
IC= -4A; IB= -40mA
ICBO
Collector Cutoff Current
VCB= -60V; IE= 0
ICEO
Collector Cutoff Current
VCE= -50V; RBE= ∞
hFE
DC Current Gain
IC= -2A; VCE= -3V
2SB1101
MIN TYP. MAX UNIT
-60
V
-7
V
-1.5
V
-3.0
V
-2.0
V
-3.5
V
-100 μA
-10
μA
1000
20000
NOTIC... |
| Document |
 2SB1101 Data Sheet
PDF 209.77KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1100 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 2 | 2SB1101 |
Hitachi Semiconductor |
PNP Transistor |
|
| 3 | 2SB1101 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB1102 |
Hitachi Semiconductor |
PNP Transistor |
|
| 5 | 2SB1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1102 |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
|