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2SB1009 |
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| Part Number | 2SB1009 |
| Manufacturer | INCHANGE |
| Description | ·High Collector Current -IC= -2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -32V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD1380 ·Minimum Lot-to-Lot variations f... |
| Features |
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB=0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage
IC= -2A; IB= -0.2A
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -0.5A; VCE= -5V
hFE Classifications P Q R 82-180 120-270 180-390 2SB1009 MIN TYP. MAX UNIT -32 V -40 V -5 V -0.8 V -1.0 μA -1.0 μA 82 390 NOTICE： ISC reserves the rights to make changes of the content here... |
| Document |
 2SB1009 Data Sheet
PDF 209.33KB |
Similar Datasheet
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| 1 | 2SB1000 |
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| 2 | 2SB1000A |
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| 3 | 2SB1001 |
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| 4 | 2SB1001 |
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| 5 | 2SB1001 |
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| 6 | 2SB1002 |
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Desde 2024. D4U Semiconductor.
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