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2SB983 |
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| Part Number | 2SB983 |
| Manufacturer | INCHANGE |
| Description | ·High Switching Time ·Low Collector Saturation Voltage : VCE(sat)= -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1345 ·Minimum Lot-to-Lot variations for robust device performa... |
| Features |
registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC= -4A; IB= -0.4A
ICBO
Collector Cutoff Current
VCB= -40V; IE= 0
ICEO
Collector Cutoff Current
VCE= -40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -1A; VCE= -2V
2SB983
MIN TYP. MAX UNIT
-50
V
-0.4
V
-1.2
V
-0.1 mA
-0.1 mA
-0... |
| Document |
 2SB983 Data Sheet
PDF 209.73KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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