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2SB813 |
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| Part Number | 2SB813 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
A; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A
ICEO
Collector Cutoff Current
VCE= -40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE
DC Current Gain
IC= -1A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -0.1A; VCE= -5V
2SB813
MIN TYP. MAX UNIT
-60
V
-60
V
-5
V
-1.5 V
-100 μA
-100 μA
60
200
20
MHz
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a gui... |
| Document |
 2SB813 Data Sheet
PDF 208.12KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB810 |
NEC |
PNP SILICON TRANSISTOR |
|
| 2 | 2SB812 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB812 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB815 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SB815 |
ON Semiconductor |
Bipolar Transistor |
|
| 6 | 2SB815 |
Kexin |
Transistor |
|
| 7 | 2SB816 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SB816 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB816 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB817 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
Desde 2024. D4U Semiconductor.
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