Busque con el número de pieza junto con el fabricante o la descripción
2SB812 |
Click to view a larger image
| Part Number | 2SB812 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP... |
| Features |
e IC= -4A; IB= -0.4A
VBE(on) Base -Emitter On Voltage
IC= -3A; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
ICES
Collector Cutoff Current
VCE= -60V; VBE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -3A; VCE= -4V
hFE-1 Classifications R Q P 40-90 70-150 120-250 2SB812 MIN TYP. MAX UNIT -60 V -1.5 V -2.0 V -700 μA -400 μA 40 250 15 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications... |
| Document |
 2SB812 Data Sheet
PDF 216.03KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB810 |
NEC |
PNP SILICON TRANSISTOR |
|
| 2 | 2SB812 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB813 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB815 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SB815 |
ON Semiconductor |
Bipolar Transistor |
|
| 6 | 2SB815 |
Kexin |
Transistor |
|
| 7 | 2SB816 |
Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors |
|
| 8 | 2SB816 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SB816 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB817 |
Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors |
|
Desde 2024. D4U Semiconductor.
|