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2SB747 |
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| Part Number | 2SB747 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD812 ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
r-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -3A; VCE= -5V
COB
Collector Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
hFE-2 Classifications R Q P 40-80 60-120 100-200 2SB747 MIN TYP. MAX UNIT -2.0 V -1.8 V -50 μA -50 μA 20 40 200 20 190 pF 7 MHz NOT... |
| Document |
 2SB747 Data Sheet
PDF 213.81KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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