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2SB713 |
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| Part Number | 2SB713 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·Good Linearity of hFE ·High Power Dissipation ·Complement to Type 2SD751 ·Minimum Lot-to-Lot variations for robust device performance and ... |
| Features |
BE(on) Base -Emitter On Voltage
IC= -7A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -140V; IE=0
IEBO
Emitter Cutoff Current
VEB= -3V; IC=0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -5A; VCE= -5V
fT
Current-Gain—Bandwidth Product IC= -0.5A; VCE= -5V
2SB713
MIN TYP. MAX UNIT
-2.0 V
-1.8 V
-50 μA
-50 μA
20
40
200
15
20
MHz
hFE-2 Classifications R Q P 40-80 60-120 100-200 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The in... |
| Document |
 2SB713 Data Sheet
PDF 217.39KB |
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Desde 2024. D4U Semiconductor.
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