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2SB634 |
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| Part Number | 2SB634 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low... |
| Features |
0mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
hFE-2
DC Current Gain
IC= -3A; VCE= -5V
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
MIN TYP. MAX UNIT
-120
V
-120
V
-6
V
-1.5 V
-0.1 mA
-0.1 mA
40
320
20
15
MHz
hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 NOTICE： ISC reserves the rights to make changes of the content her... |
| Document |
 2SB634 Data Sheet
PDF 208.54KB |
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Desde 2024. D4U Semiconductor.
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