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2SB502 |
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| Part Number | 2SB502 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -2mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= -3A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -8V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -5V
hFE-2
DC Current Gain
IC= -2.5A; VCE= -5V
hFE Classifications R O Y 30-70 50-140 100-280 2SB502 MIN TYP. MAX UNIT -80 V -110 V -8 V -1.5 V -1.8 V -10 μA -100 μA 30 280 15 NOTICE： I... |
| Document |
 2SB502 Data Sheet
PDF 211.47KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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