2SA1010 |
Part Number | 2SA1010 |
Manufacturer | INCHANGE |
Description | ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC2334 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for hig... |
Features |
RACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -5.0A ; IB= -0.5A, L=1mH
VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -100V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -5V
hFE-2
DC Current Gain
IC= -3.0A ; VCE= -5V
hFE-3
DC Current Gain
IC= -5.0A ; VCE= -5V
hFE-2 Classifications M L K 40-80 60-120 100-200 2SA1010 MIN MAX UNIT... |
Document |
2SA1010 Data Sheet
PDF 214.91KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SA101 |
ETC |
Ge PNP Drift Transistor | |
2 | 2SA1010 |
NEC |
SILICON POWER TRANSISTOR | |
3 | 2SA1010 |
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4 | 2SA1011 |
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5 | 2SA1011 |
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