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2SA900 |
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| Part Number | 2SA900 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -18V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SC1568 ·Minimum Lot-to-Lot variations for robust device perfor... |
| Features |
0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -10μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
ICEO
Collector Cutoff Current
VCE= -18V; IB= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -1.5A ; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -50mA; VCE= -6V
COB
Output Capacitance
IE=0; VCB= -6V, ftest= 1MHz
MIN TYP. MAX UNIT
-18
V
-20
V
-5
V
-0.... |
| Document |
 2SA900 Data Sheet
PDF 213.09KB |
Desde 2024. D4U Semiconductor.
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