Busque con el número de pieza junto con el fabricante o la descripción
2SA671 |
Click to view a larger image
| Part Number | 2SA671 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage- : VCE(SUS)= -1.0V(Max)@ IC= -2.0A ·DC Current Gain : hFE= 35-320@ IC= -0.5A ·Complement to Type 2SC1061 ·Minimum Lot-to-Lot variations for robust device performance ... |
| Features |
AL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-50
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA ; IC= 0
-7
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
-1.0
V
VBE(on) Base-Emitter On Voltage
IC= -1A ; VCE= -4V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -25V ; IE= 0
-100 μA
IEBO
Emitter Cutoff Current
VEB= -4V; IC= 0
-100 μA
hFE-1
DC Current Gain
IC= -0.1A ; VCE= -4V
35
320
hFE-2
DC Current Gain
IC= -1A ; VCE= -4V
35
fT... |
| Document |
 2SA671 Data Sheet
PDF 200.99KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA670 |
SavantIC |
Silicon POwer Transistors |
|
| 2 | 2SA670 |
Inchange Semiconductor |
Power Transistor |
|
| 3 | 2SA671 |
Mospec Semiconductor |
POWER TRANSISTORS |
|
| 4 | 2SA671 |
Wing Shing Computer Components |
PNP EPITAXIAL SILICON TRANSISTOR |
|
| 5 | 2SA673 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 6 | 2SA673 |
Micro Electronics |
SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|