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TIC225 |
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| Part Number | TIC225 |
| Manufacturer | INCHANGE |
| Description | ·Sensitive Gate Triacs ·8A RMS ,70A Peak ·Glass passivated Wafer ·400V to 800V off-state Voltage ·Max IGT of 5mA(Quadrants 1) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device pe... |
| Features |
sistance,Junction to Case
Rth j-a
Thermal Resistance,Junction to Ambient
MAX UNIT 2.5 ℃/W 62.5 ℃/W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBO L
PARAMETER
IRRM Repetitive peak reverse current
IDRM Repetitive peak off-state current
Ⅰ
Ⅱ IGT Gate trigger current
Ⅲ Ⅳ Holding current IH
Ⅰ
Ⅱ VGT Gate trigger voltage
Ⅲ Ⅳ
VTM On-state voltage
CONDITIONS VRM=VRRM,
VRM=VRRM, Tj=110℃
VDM=VDRM,
VDM=VDRM, Tj=110℃
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
Vsupply = 12 V†, IG= 0 initial ITM= 100mA
Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs
IT= 12A; IG= 50mA
MAX UNIT
0.4 2.0
mA
0.4... |
| Document |
 TIC225 Data Sheet
PDF 181.27KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC225 |
BOURNS |
SILICON TRIACS |
|
| 2 | TIC225 |
Power Innovations Limited |
SILICON TRIACS |
|
| 3 | TIC225A |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 4 | TIC225B |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 5 | TIC225C |
Comset Semiconductors |
(TIC225x) SILICON BIDIRECTIONAL TRIODE THYRISTOR |
|
| 6 | TIC225D |
BOURNS |
SILICON TRIACS |
|
Desde 2024. D4U Semiconductor.
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