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TIC106M |
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| Part Number | TIC106M |
| Manufacturer | BOURNS |
| Description | TIC106 SERIES SILICON CONTROLLED RECTIFIERS 5 A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max IGT of 200 µA This series is obsolete and no... |
| Features |
perature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
VDRM
VRRM
IT(RMS) IT(AV) ITSM IGM PGM PG(AV)
TC Tstg TL
VALUE
400 600 700 800 400 600 700 800
5
3.2
30 0.2 1.3 0.3 -40 to +110 -40 to +125 230
UNIT
V
V
A A A A W W °C °C °C
NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate linearly t... |
| Document |
 TIC106M Data Sheet
PDF 151.83KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TIC106 |
Power Innovations Limited |
SILICON CONTROLLED RECTIFIERS |
|
| 2 | TIC106A |
Texas Instruments |
PNPN SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
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| 3 | TIC106A |
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P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
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| 4 | TIC106B |
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| 5 | TIC106B |
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P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
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| 6 | TIC106C |
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P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTOR |
|
Desde 2024. D4U Semiconductor.
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