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MJE18004G |
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| Part Number | MJE18004G |
| Manufacturer | INCHANGE |
| Description | ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·G:Pb-Free Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable oper... |
| Features |
c & iscsemi is registered trademark
isc Silicon NPN Power Transistor
MJE18004G
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB=0
VCE(sat)-1 VCE(sat)-2
Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
IC= 1 A ;IB= 0.1A TC=125℃
IC= 2A ;IB= 0.4 A TC=125℃
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 2.5A ;IB= 0.5 A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
450
V
0.5 0.6
V
0.45 0.8
V
0.75 V
1.1
V
VBE(sat)-2 Ba... |
| Document |
 MJE18004G Data Sheet
PDF 197.53KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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