MJE16002 |
Part Number | MJE16002 |
Manufacturer | INCHANGE |
Description | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 450V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use... |
Features |
RISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
isc website:www.iscsemi.com
MAX UNIT 1.56 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJE16002
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A ;IB= 0.2A
VCE(sat)-2 VBE(sat)
ICBO
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current
IC= 3A ;IB= 0.4A TC= 100℃
... |
Document |
MJE16002 Data Sheet
PDF 210.06KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MJE16002 |
Motorola |
5.0 AMPERE NPN SILICON POWER TRANSISTORS | |
2 | MJE16002 |
ON |
NPN SILICON POWER TRANSISTORS | |
3 | MJE16004 |
INCHANGE |
NPN Transistor | |
4 | MJE16004 |
Motorola |
5.0 AMPERE NPN SILICON POWER TRANSISTORS | |
5 | MJE16004 |
ON |
NPN SILICON POWER TRANSISTORS | |
6 | MJE16004 |
SavantIC |
SILICON POWER TRANSISTOR |