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MJE1100 |
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| Part Number | MJE1100 |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI... |
| Features |
L CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
ICEO
Collector Cutoff Current
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 30V; IB= 0
VCB= 60V;IE= 0 VCB= 60V;IE= 0;TC= 100℃
VEB= 5V; IC=0
hFE
DC Current Gain
IC= 3A ; VCE= 3V
MIN TYP. MAX UNIT
60
V
2.5
V
2.5
V
0.5
mA
0.2 2.0
mA
2.0
mA
750
NOTICE： ISC reserves the rights to make changes of the con... |
| Document |
 MJE1100 Data Sheet
PDF 212.62KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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