D45C7 |
Part Number | D45C7 |
Manufacturer | INCHANGE |
Description | ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D44C7 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desig... |
Features |
Resistance, Junction to Case
MAX UNIT 4.2 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistors
D45C7
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A ;IB= -100mA
-0.5 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A ;IB= -100mA
-1.3 V
ICES
Collector Cutoff Current
VCE= -70V,
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-100 μA
hFE-1
DC Current Gain
IC= -0.2A ; VCE= -1V
25
hFE-2
DC Current Gain
IC... |
Document |
D45C7 Data Sheet
PDF 190.75KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | D45C |
Motorola Inc |
4.0 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS | |
2 | D45C |
SavantIC |
SILICON POWER TRANSISTOR | |
3 | D45C1 |
Mospec Semiconductor |
Power Transistors | |
4 | D45C1 |
INCHANGE |
PNP Transistor | |
5 | D45C1 |
GE |
PNP POWER TRANSISTORS | |
6 | D45C10 |
Inchange Semiconductor |
Silicon PNP Power Transistors |