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BUL382D |
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| Part Number | BUL382D |
| Manufacturer | INCHANGE |
| Description | ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variat... |
| Features |
nction to Ambient 62.5 ℃/W
BUL382D
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BUL382D
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; Ib=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A
VBE(sat)-1 Base-Emitter Saturation V... |
| Document |
 BUL382D Data Sheet
PDF 209.23KB |
Similar Datasheet
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|---|---|---|---|---|
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Desde 2024. D4U Semiconductor.
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