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BU526A |
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| Part Number | BU526A |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 460V(Min.) ·High Speed Switching ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
L CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB=0
V(BR)CER Collector-Emitter Breakdown Voltage IC= 0.5mA; RBE≤ 100Ω
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 3A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 6A; IB= 1.25A
VCE=900V; VBE= 0; VCE=900V; VBE= 0; TC= 150℃
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
fT
Current-Gain—Bandwidth Product
IC= 0.5A; VCE=... |
| Document |
 BU526A Data Sheet
PDF 201.33KB |
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Desde 2024. D4U Semiconductor.
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