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BU212 |
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| Part Number | BU212 |
| Manufacturer | INCHANGE |
| Description | ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 750V (Min) ·High Current Capability ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and re... |
| Features |
ltage IC= 50mA; IB= 0
350
V
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
750
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
8
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2.5A
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 2.5A
2.2
V
ICBO
Collector Cutoff Current
VCB= 750V; IE= 0
0.1 mA
IEBO
Emitter Cutoff Current
VEB= 8V; IC= 0
0.1 mA
hFE
DC Current Gain
IC= 8A; VCE= 5V
5
fT
Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V
6
MHz
tf
Fall Time
IC= 8A; IB1= -IB2= 2.5A
1.0 μs
NOTICE： ISC reserves the rights to ... |
| Document |
 BU212 Data Sheet
PDF 200.23KB |
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Desde 2024. D4U Semiconductor.
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