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BU209A |
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| Part Number | BU209A |
| Manufacturer | INCHANGE |
| Description | ·High Voltage Capability ·High Peak Power ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed fo... |
| Features |
RACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CES Collector-Emitter Breakdown Voltage IC= 10mA
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 1.3A
hFE
DC Current Gain
IC= 3A ; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V;ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.1A;VCE= 5V;ftest= 5MHz
Switching Times
ts
Storage Time
tf
Fall Time
IC= 3A; IB= 1.8A;LB= 10μH
MIN TYP. MAX UNIT
1500
V
5
V
5.0
V
1.5
... |
| Document |
 BU209A Data Sheet
PDF 201.83KB |
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Desde 2024. D4U Semiconductor.
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