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BDX35 |
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| Part Number | BDX35 |
| Manufacturer | INCHANGE |
| Description | ··High Current Capability-IC= 5A(DC) ·DC Current Gain— : hFE = 45-450(Min) @ IC= 0.5 A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Minimum Lot-to-Lot variations for robust device perf... |
| Features |
semi is registered trademark
isc Silicon NPN Power Transistor
BDX35
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
60
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5 A ;IB= 0.5A
0.9
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A ;IB= 0.7A
1.2
V
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5 A ;IB= 0.5A
1.7
V
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 7A ;IB= 0.7A
VCB= 80V;... |
| Document |
 BDX35 Data Sheet
PDF 207.62KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX30 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTORS |
|
| 2 | BDX33 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 3 | BDX33 |
CDIL |
NPN/PNP PLASTIC POWER TRANSISTORS |
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| 4 | BDX33 |
MCC |
NPN Silicon Power Darlingtons |
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| 5 | BDX33 |
Bourns Electronic Solutions |
NPN Transistor |
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| 6 | BDX33 |
Micro Commercial Components |
NPN Silicon Power Darlingtons |
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Desde 2024. D4U Semiconductor.
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