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BDT62F |
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| Part Number | BDT62F |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 1000(Min)@ IC= -3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min) ·Complement to Type BDT63F ·Minimum Lot-to-Lot variations for robust device performance and re... |
| Features |
mbient
70
℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistors
BDT62F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDT62
-60
BDT62A
-80
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -30mA; IB= 0
V
BDT62B
-100
BDT62C
-120
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -12mA
-2.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -8A; IB= -80mA
-2.5 V
VBE(on) ICBO
Base-Emitter On Voltage
BDT62
Coll... |
| Document |
 BDT62F Data Sheet
PDF 213.81KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT62 |
INCHANGE |
Silicon PNP Darlington Power Transistors |
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| 2 | BDT62 |
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| 3 | BDT62A |
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| 4 | BDT62A |
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| 5 | BDT62B |
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| 6 | BDT62B |
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Desde 2024. D4U Semiconductor.
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