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BD829 |
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| Part Number | BD829 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD828 ·Minimum Lot-to-Lot variations for robust device performance and reli... |
| Features |
& iscsemi is registered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD829
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.5A ; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0 VCB= 30V; IE= 0; TC= 125℃
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 2V
hFE-2
DC Current Gain
IC= 150mA ; VCE= 2V
hFE-3
DC Curren... |
| Document |
 BD829 Data Sheet
PDF 207.46KB |
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Desde 2024. D4U Semiconductor.
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