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BD826 |
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| Part Number | BD826 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) ·High DC Current Gain ·Low Saturation Voltage ·Complement to Type BD825 ·Minimum Lot-to-Lot variations for robust device performance and rel... |
| Features |
isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD826
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=- 500mA; IB= -50mA
VBE(on) Base-Emitter On Voltage
IC= -0.5A ; VCE= -2V
ICBO
Collector Cutoff Current
VCB= -30V; IE= 0 VCB=-30V; IE= 0; TC= 125℃
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -5mA ; VCE= -2V
hFE-2
DC Current Gain
IC= -150mA ; VCE= -2V
... |
| Document |
 BD826 Data Sheet
PDF 212.80KB |
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Desde 2024. D4U Semiconductor.
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