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3DD13009N |
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| Part Number | 3DD13009N |
| Manufacturer | INCHANGE |
| Description | ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Energy-saving ligh ·High frequ... |
| Features |
Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A ;IB= 1.6A
ICBO
Collector Cutoff Current
VCB= 700V; IE=0
IEBO
Emitter Cutoff Current
VEB= 10V; IC= 0
hFE-1
DC Current Gain
IC= 5A; VCE= 5V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
3DD13009N
MIN TYP. MAX UNIT
400
V
1.5
V
1.6
V
0.1 mA
0.01 mA
8
40
8
isc Website：www.iscsemi.com
2 isc & iscsemi is... |
| Document |
 3DD13009N Data Sheet
PDF 248.95KB |
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Desde 2024. D4U Semiconductor.
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