Busque con el número de pieza junto con el fabricante o la descripción
3DD523 |
Click to view a larger image
| Part Number | 3DD523 |
| Manufacturer | INCHANGE |
| Description | ·Excellent safe operating area ·Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose... |
| Features |
IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ;IB= 3.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A ;IB= 4A
ICBO
Collector Cutoff Current
VCB= 150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
hFE-1
DC Current Gain
IC= 5A; VCE= 5V
hFE-2
DC Current Gain
IC= 10A; VCE= 5V
3DD523
MIN TYP. MAX UNIT
150
V
7
V
150
V
1.1
V
3.0
V
1.5
V
0.1 mA
0.1 mA
55
80
5
NOTICE... |
| Document |
 3DD523 Data Sheet
PDF 198.17KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD5287 |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 2 | 3DD5287C |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 3 | 3DD5011 |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR |
|
| 4 | 3DD5011A9 |
Huajing Microelectronics |
Silicon NPN Bipolar Transistor |
|
| 5 | 3DD5011AH |
Huajing Microelectronics |
Silicon NPN Bipolar Transistor |
|
| 6 | 3DD5017 |
JILIN SINO-MICROELECTRONICS |
CASE-RATED BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|