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3DD209L |
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| Part Number | 3DD209L |
| Manufacturer | INCHANGE |
| Description | ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Energy-saving light ·Electroni... |
| Features |
O Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A ;IB= 1.6A
ICEO
Collector Cutoff Current
VCE= 400V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 9V; IC= 0
hFE-1
DC Current Gain
IC= 5A; VCE= 10V
hFE-2
DC Current Gain
IC= 8A; VCE= 5V
3DD209L
MIN TYP MAX UNIT
400
V
700
V
9
V
1.2
V
1.8
V
1.8
V
50
uA
10
uA
8
40
5
NOTICE： ISC reserves the rights to make changes of the content herein the datashee... |
| Document |
 3DD209L Data Sheet
PDF 208.70KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD209L |
Jilin Sino |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 2 | 3DD200 |
Inchange |
Silicon Power Transistor |
|
| 3 | 3DD200D |
INCHANGE |
NPN Transistor |
|
| 4 | 3DD201 |
Inchange |
Silicon Power Transistor |
|
| 5 | 3DD202A |
INCHANGE |
NPN Transistor |
|
| 6 | 3DD202B |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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