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3DD200D |
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| Part Number | 3DD200D |
| Manufacturer | INCHANGE |
| Description | ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 8A ·Minimum Lot-to-Lot variations for robust device performance and reliab... |
| Features |
：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
3DD200D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0
VCBO
Collector- Base Sustaining Voltage IB=1mA ; IE=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 3.2A
VBE(on) Base-Emitter On Voltage
IC= 8A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 200V; IB=0
IEBO
Emitter Cutoff Current
... |
| Document |
 3DD200D Data Sheet
PDF 201.39KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
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