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3DD104B |
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| Part Number | 3DD104B |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
ERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0
BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
hFE
DC Current Gain
IC= 1.5A; VCE= 10V
MIN MAX UNIT
300
V
600
V
4
V
2
V
0.1
mA
10
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained he... |
| Document |
 3DD104B Data Sheet
PDF 200.25KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD104A |
INCHANGE |
NPN Transistor |
|
| 2 | 3DD104C |
INCHANGE |
NPN Transistor |
|
| 3 | 3DD104D |
INCHANGE |
NPN Transistor |
|
| 4 | 3DD104E |
INCHANGE |
NPN Transistor |
|
| 5 | 3DD10 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 6 | 3DD100 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
Desde 2024. D4U Semiconductor.
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