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3DD101C |
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| Part Number | 3DD101C |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
RISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0
BVCBO Collector-Base Sustaining Voltage
IC= 5mA; IE= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.25A
ICEO
Collector Cutoff Current
VCE= 50V; IB= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
MIN MAX UNIT
200
V
250
V
4
V
1.5
V
1.0
mA
2.0
mA
20
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet a... |
| Document |
 3DD101C Data Sheet
PDF 178.91KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD101 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 2 | 3DD101A |
SJ |
Power Transistor |
|
| 3 | 3DD101A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 3DD101B |
SJ |
Power Transistor |
|
| 5 | 3DD101B |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 6 | 3DD101C |
SJ |
Power Transistor |
|
Desde 2024. D4U Semiconductor.
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