Busque con el número de pieza junto con el fabricante o la descripción
3DD100E |
Click to view a larger image
| Part Number | 3DD100E |
| Manufacturer | INCHANGE |
| Description | ·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO... |
| Features |
ACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCEO Collector-Emitter Sustaining Voltage IC= 1mA; IB= 0
BVCBO Collector-Base Sustaining Voltage IC= 1mA; IE= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
ICEO
Collector Cutoff Current
VCE= 50V; IB= 0
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 5V
MIN MAX UNIT
300
V
350
V
4
V
1.5
V
0.2
mA
0.5
mA
40
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet... |
| Document |
 3DD100E Data Sheet
PDF 202.33KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD100 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 2 | 3DD100A |
INCHANGE |
NPN Transistor |
|
| 3 | 3DD100B |
INCHANGE |
NPN Transistor |
|
| 4 | 3DD100C |
INCHANGE |
NPN Transistor |
|
| 5 | 3DD100D |
INCHANGE |
NPN Transistor |
|
| 6 | 3DD10 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
Desde 2024. D4U Semiconductor.
|