Busque con el número de pieza junto con el fabricante o la descripción
3DD9H |
Click to view a larger image
| Part Number | 3DD9H |
| Manufacturer | INCHANGE |
| Description | ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION... |
| Features |
ess otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base Sustaining Voltage IC= 10mA; IE= 0
BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0
BVEBO Emitter-Base Sustaining Voltage
IE= 10mA; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A
VBE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A
ICEO
Collector Cutoff Current
VCE=100V; IE= 0
hFE
DC Current Gain
IC= 3.5A; VCE= 10V
MIN MAX UNIT
500
V
500
V
5
V
2.0
V
1.8
V
2.0
mA
7
120
NOTICE： ISC reserves the rights to make changes of the content herein the datashee... |
| Document |
 3DD9H Data Sheet
PDF 188.67KB |
Desde 2024. D4U Semiconductor.
|