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2SD1409A |
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| Part Number | 2SD1409A |
| Manufacturer | INCHANGE |
| Description | ·High collector-emitter breakdown voltage- : V(BR)CEO= 400V(Min) ·High DC current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable opera... |
| Features |
HARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
VECF
C-E Diode Forward Voltage
IF= 4A
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE -1
DC Current Gain
IC= 2A ; VCE= 2V
hFE -2
DC Current Gain
IC= 4A ; VCE= 2V
MIN TYP. MAX UNIT
400
V
2.0
V
2.5
V
3.0
V
0.5
mA
3.0
mA
600
100
NOTICE： ISC reserves the right... |
| Document |
 2SD1409A Data Sheet
PDF 187.13KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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