2SC3858 |
Part Number | 2SC3858 |
Manufacturer | INCHANGE |
Description | ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 200V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1494 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
Features |
0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 200V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 8A ; VCE= 4V
COB
Output Capacitance
IE= 0 ; VCB= 10V;ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IE= -1A ; VCE= 12V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 10A ,RL= 4Ω, IB1= -IB2= 1A,VCC= 40V
hFE Classifications Y P G 50-100 70-140 90-180 MIN TYP. MAX UNIT 200 V 2.5 V 100 μA 100 μA 50 180 300 pF 20 MHz 0.5 μs 1.8 μs 0.6 μs NOTICE: ISC r... |
Document |
2SC3858 Data Sheet
PDF 232.79KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3850 |
SavantIC |
SILICON POWER TRANSISTOR | |
2 | 2SC3850 |
INCHANGE |
NPN Transistor | |
3 | 2SC3851 |
Sanken electric |
Silicon NPN Transistor | |
4 | 2SC3851 |
SavantIC |
SILICON POWER TRANSISTOR | |
5 | 2SC3851 |
INCHANGE |
NPN Transistor | |
6 | 2SC3851A |
Sanken electric |
Silicon NPN Transistor |