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2SC3621 |
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| Part Number | 2SC3621 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage ·High breakdown voltage ·Complementary to 2SA1408 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT... |
| Features |
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC=500mA; IB= 50mA
VBE(ON) Base-Emitter On Voltage
IC= 5mA ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 150V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 200mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product
IE= 200mA; VCE= 5V
COB
Output Capacitance
IE= 0 ; VCB= 10V,ftest= 1MHz
MIN TYP. MAX UNIT
150
V
150
V
6
V
1.5
V
0.8
V
1.0 μA
1.0 μA
60
200
20 100
MHz
13
pF
hFE Cla... |
| Document |
 2SC3621 Data Sheet
PDF 207.13KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3620 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 2 | 2SC3621 |
Toshiba Semiconductor |
NPN Transistor |
|
| 3 | 2SC3622 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
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| 4 | 2SC3622A |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 5 | 2SC3623 |
NEC |
NPN SILICON TRANSISTOR |
|
| 6 | 2SC3623A |
NEC |
NPN SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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