Busque con el número de pieza junto con el fabricante o la descripción
2SA2097 |
Click to view a larger image
| Part Number | 2SA2097 |
| Manufacturer | INCHANGE |
| Description | ·With TO-252(DPAK) packaging ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable op... |
| Features |
MAX UNIT
BVCBO Collector-Base Breakdown Voltage IC=-1mA; IB=0
-50
-
V
BVCEO Collector-Emitter Breakdown Voltage IC=-10mA; IB=0
-50
-
-
V
VCE(sat) Collector-Emitter Saturation Voltage IC=-1.6A; IB= -53mA
-
- -0.27 mV
VBE(sat) Base-Emitter Saturation Voltage
IC=-1.6A; IB= -53mA
-
- -1.10 V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
-
-
-100 μA
IEBO
Emitter Cutoff Current
VEB= -7V; IC=0
-
-
-100 μA
hFE-1
DC Current Cain
IC= -0.5A ; VCE= -2V
200
-
500
-
hFE-2 tr
tstg tf
DC Current Cain Rise time Storage time Fall time
IC= -2A ; VCE= -1.6V
100
-
-
-
VC... |
| Document |
 2SA2097 Data Sheet
PDF 251.52KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA2091S |
Rohm |
Medium power transistor |
|
| 2 | 2SA2093 |
Rohm |
Power transistor |
|
| 3 | 2SA2097 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 4 | 2SA2098 |
Sanyo |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 5 | 2SA2099 |
Sanyo Semiconductor |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 6 | 2SA2002 |
IDC |
Silicon PNP Epitaxial Type Transistor |
|
Desde 2024. D4U Semiconductor.
|