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2N6045G |
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| Part Number | 2N6045G |
| Manufacturer | INCHANGE |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A ·Complement to... |
| Features |
1.67 ℃/W
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2N6045G
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0
100
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A, IB= 12mA
2.0
V
VCE(sat)-2 Collector-Emitter Saturation voltage IC= 8A, IB= 80mA
4.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 8A, IB= 80mA
4.5
V
VBE(on)
Base-Emitter On Voltage
IC= 4A;... |
| Document |
 2N6045G Data Sheet
PDF 195.23KB |
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