Busque con el número de pieza junto con el fabricante o la descripción
R6020ENX |
Click to view a larger image
| Part Number | R6020ENX |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor R6020ENX ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.196Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variatio... |
| Features |
· Drain-source on-resistance: RDS(on) ≤ 0.196Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 20 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 68 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) C... |
| Document |
 R6020ENX Data Sheet
PDF 217.19KB |
Desde 2024. D4U Semiconductor.
|