MMD80R900P |
Part Number | MMD80R900P |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MMD80R900P ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minim... |
Features |
·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Motor contorl ·DC-DC conventers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 6 3.8 18 PD Total Dissipation @TC=25℃ 75.8 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 ... |
Document |
MMD80R900P Data Sheet
PDF 203.90KB |
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