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MDP10N60GTH |
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| Part Number | MDP10N60GTH |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust ... |
| Features |
·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications INCHANGE Semiconductor MDP10N60GTH ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 10 6.3 40 PD Total Dissipation 48 Tj Operating Junction Temperature -55~150 T... |
| Document |
 MDP10N60GTH Data Sheet
PDF 197.74KB |
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Desde 2024. D4U Semiconductor.
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