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STW23NM60ND |
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| Part Number | STW23NM60ND |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d... |
| Features |
·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor STW23NM60ND ·APPLICATIONS ·PFC stages ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 20 12.6 80 PD Total Dissipation 150 Tj Operating Junction Temperature -55~150 Tstg Storage ... |
| Document |
 STW23NM60ND Data Sheet
PDF 208.60KB |
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Desde 2024. D4U Semiconductor.
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