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STW20NM60FD |
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| Part Number | STW20NM60FD |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STW20NM60FD ·FEATURES ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Tight process control and high ... |
| Features |
·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Tight process control and high manufacturing yields ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching application ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±30 20 12.6 80 PD Total Dissipation 214 Tch Max. Operating Junction Temperature -65~150 Tstg Storage Temperature -65~150 UNIT V V... |
| Document |
 STW20NM60FD Data Sheet
PDF 208.28KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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