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STP60N06-14 |
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| Part Number | STP60N06-14 |
| Manufacturer | INCHANGE |
| Description | Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STP60N06-14 ·FEATURES ·With low gate drive requirements ·Easy to drive ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot vari... |
| Features |
·With low gate drive requirements ·Easy to drive ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Solenold and relay dirvers ·DC-DC converters ·Automotive environment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±20 60 50 240 PD Total Dissipation 150 Tj Operating Junction Temperature -65~175 Tstg Storage Temperature -65~175 UNIT V V A A W... |
| Document |
 STP60N06-14 Data Sheet
PDF 223.73KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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