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STP6NK60Z |
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| Part Number | STP6NK60Z |
| Manufacturer | INCHANGE |
| Description | ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ... |
| Features |
nel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃) INCHANGE Semiconductor STP6NK60Z SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=0.25mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250uA 3.0 4.5 V VSD Diode Forward On-Voltage IS=6A ;VGS= 0 1.6 V RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VGS= 10V; ID=3A VGS= ±20V;VDS= 0 VDS= 600V; VGS= 0 Tj=25℃ Tj=125℃ 1 1.2 Ω ±10 uA 1 50 µA NOTICE： ISC reserves the rights to make changes of the content he... |
| Document |
 STP6NK60Z Data Sheet
PDF 204.40KB |
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Desde 2024. D4U Semiconductor.
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